10 single ended ac 6.0 0.6 10.0 10.00 c/w 65 0.3 1.40 0.2 45 4.00 0.50 1.2 20 0.02 70 parameter symbol min typ max units test conditions common source power gain drain efficiency total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to source voltage gate to source voltage -65 c to 150 c c a v load mismatch tolerance vswr drain to gate voltage relative 0.20 10.00 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.20 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacitance idq = idq = 0.20 1,000 vgs = rdson saturation resistance forward transconductance gm vds = 10v, vgs = 5v polyfet rf devices 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:sell@polyfet.com url:www.polyfet.com 1,000 1,000 common source input capacitance 70 v igss vgs idsat zero bias drain current gate leakage current gate bias for drain current saturation current 25 ua v mho ohm amp parameter symbol min typ max units test conditions electrical characteristics ( each side ) rf characteristics ( 4.0 absolute maximum ratings ( t = gps 28.0 a, vds = v, f = a, vds = v, f = 28.0 28.0 watts v 1 mhz mhz mhz watts package style 4.0 vds = 0v vgs = 10v high efficiency, linear high gain, low noise general description 28.0 vds = a, vgs = vds ids = a ? db % o o o o o silicon gate enhancement mode rf power transistor vdmos vgs = 0v, f = 1 mhz 28.0 vds = vgs = 0v, f = 1 mhz 28.0 vds = vgs = 0v, f = 1 mhz 28.0 revision 01/09/2008 20 25 c ) watts output ) 200 polyfet rf devices SC201 20:1 rohs compliant silicon vdmos transistor designed specifically for broadband rf applications. suitable for military radios, cellular base staions, broadcast fm/am, mri, laser drivers and others. "polyfet" process features low feedback and output capacitances, resulting in high ft transistors with high input impedance and high efficiency. + v, ids = 20 v, vds = 10v vgs = 20 0 - v
s2a 1 die id & gm vs vg 0.01 0.10 1.00 10.00 024681012141618 vgs in volts id in amps; gm in mhos id gm s2a 1 dice capacitance 0.1 1 10 100 0 4 8 12 16 20 24 28 vds in volts capacitance in pfs coss ciss crss polyfet rf devices pout vs pin graph capacitance vs voltage id & gm vs vgs iv curve package dimensions in inches SC201 s2a 1 die iv 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20 vds in volts id in amp s vg=2v vg=4v vg=6v vg=8v 0 vg=12v 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:sell@polyfet.com url:www.polyfet.com revision 01/09/2008 tolerance .xx +/-0.01 .xxx +/-.005 inches
|
